Modeling approaches for band-structure calculation in III-V FET quantum wells

Author

Caruso, E. ; Zerveas, G. ; Baccarani, G. ; Czornomaz, L. ; Daix, N. ; Esseni, D. ; Gnani, E. ; Gnudi, A. ; Grassi, R. ; Luisier, M. ; Markussen, T. ; Palestri, P. ; Schenk, A. ; Selmi, L. ; Sousa, M. ; Stokbro, K. ; Visciarelli, M.

Author_Institution

DIEGM, Univ. of Udine, Udine, Italy

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

101

Lastpage

104

Abstract

We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k·p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thickness ranging from 3nm to 10nm. Comparison with experiments for unstrained and strained InGaAs quantum-wells is also reported.

Keywords

III-V semiconductors; density functional theory; field effect transistors; semiconductor device models; semiconductor quantum wells; tight-binding calculations; III-V FET quantum wells; InGaAs; band-structure calculation; density functional theory; non-parabolic effective mass descriptions; size 3 nm to 10 nm; tight-binding; Aluminum oxide; Computational modeling; Crystals; Discrete Fourier transforms; Effective mass; Gallium arsenide; Quantization (signal); DFT; III-V compounds; band-structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063783

Filename

7063783