Determination of the transport parameters in two-dimensional semiconductor systems and thin films by contactless microwave methods

Author

Kornilovich, A.A.

Author_Institution

Novosibirsk State Tech. Univ., Russia

Volume

1

fYear

2002

fDate

1-5 July 2002

Firstpage

75

Lastpage

76

Abstract

The results of theoretical and experimental study of Shubnikov-de Haas effect and cyclotron resonance by microwave methods (ω/2π=37.8GHz) in AlGaAs/GaAs heterostructures are presented. The theoretical expressions for the determination of the carrier concentration and mobility are obtained. With these data, the transport parameters in two-dimensional systems and thin films can be determined with an accuracy ∼0.5%.

Keywords

III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; carrier mobility; cyclotron resonance; gallium arsenide; millimetre wave measurement; 2D semiconductor systems; 37.8 GHz; AlGaAs-GaAs; Shubnikov-de Haas effect; carrier concentration; carrier mobility; contactless microwave methods; cyclotron resonance; thin films; transport parameters; Cyclotrons; Electron optics; Gallium arsenide; Magnetic resonance; Microwave theory and techniques; Optical films; Optical superlattices; Power measurement; Reflectivity; Semiconductor thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on

Print_ISBN

5-7782-0380-2

Type

conf

DOI

10.1109/SREDM.2002.1024313

Filename

1024313