• DocumentCode
    2075784
  • Title

    Drift-diffusion simulation without Einstein relation

  • Author

    Bufler, F.M. ; Erlebach, A. ; Wettstein, A.

  • Author_Institution
    Inst. fur Integrierte Syst., ETH Zurich, Zürich, Switzerland
  • fYear
    2015
  • fDate
    26-28 Jan. 2015
  • Firstpage
    109
  • Lastpage
    112
  • Abstract
    We suggest that the overestimation of the linear current in nanoscale devices by the standard drift-diffusion (DD) model is due to approximating the diffusivity by the Einstein relation. Using instead in DD simulation the field-dependent diffusivity from bulk Monte Carlo (MC) simulation is shown to remove this overestimation compared to MC device simulation of 1D nin-structures. This new approach has the potential to increase significantly the accuracy of DD simulation of short-channel devices.
  • Keywords
    Monte Carlo methods; semiconductor device models; 1D nin-structures; MC device simulation; bulk MC simulation; bulk Monte Carlo simulation; drift-diffusion simulation; field-dependent diffusivity; linear current overestimation; nanoscale devices; short-channel devices; standard DD model; standard drift-diffusion model; Calibration; Computational modeling; Mathematical model; Monte Carlo methods; Semiconductor device modeling; Silicon; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
  • Conference_Location
    Bologna
  • Type

    conf

  • DOI
    10.1109/ULIS.2015.7063785
  • Filename
    7063785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2075784