DocumentCode :
2075802
Title :
Al2O3/InGaAs interface study on MOS capacitors for a 300mm process integration
Author :
Billaud, M. ; Duvernay, J. ; Grampeix, H. ; Pelissier, B. ; Martin, M. ; Baron, T. ; Boutry, H. ; Chalupa, Z. ; Casse, M. ; Ernst, T. ; Vinet, M.
Author_Institution :
LTM, Univ. Grenoble Alpes, Grenoble, France
fYear :
2015
fDate :
26-28 Jan. 2015
Firstpage :
113
Lastpage :
116
Abstract :
Al2O3/InGaAs interface has been studied and optimized for a 300mm compatible process. XPS analysis and electrical measurements of MOS capacitors revealed that a NH4OH treatment associated with TMA precursor pulse before the ALD deposition is efficient to remove InGaAs oxides. This yields to a good Al2O3/InGaAs interface quality with a low Dit value (~3×1012 cm-2eV-1), and passivated border traps.
Keywords :
III-V semiconductors; MOS capacitors; X-ray photoelectron spectra; alumina; electron traps; gallium arsenide; indium compounds; interface states; interface structure; semiconductor-insulator boundaries; surface treatment; ALD deposition; Al2O3-InGaAs; MOS capacitors; NH4OH; TMA precursor pulse; XPS analysis; passivated border traps; Aluminum oxide; Dielectrics; Indium gallium arsenide; Logic gates; Passivation; Substrates; InGaAs; border traps; capacitors; high-k; oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
Type :
conf
DOI :
10.1109/ULIS.2015.7063786
Filename :
7063786
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2075802
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