• DocumentCode
    2075807
  • Title

    The linear piezoresistance effect in p-GexSi1-x alloys

  • Author

    Dragunov, Valery P. ; Shishkov, Andrey A.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • Volume
    1
  • fYear
    2002
  • fDate
    1-5 July 2002
  • Abstract
    Based un three-band spectrum model taking into account main scattering mechanisms the concentration dependencies of linear piezoresistance coefficients in p-GexSi1-x alloys were calculated. It is shown that the piezoresistance dependence upon the alloy composition X has a non-monotonous character.
  • Keywords
    Ge-Si alloys; alloys; elemental semiconductors; impurity distribution; piezoresistance; surface scattering; GeSi; alloy composition; concentration dependence; linear piezoresistance effect; nonmonotonous character; piezoresistance dependence; scattering mechanisms; three-band spectrum model; Acoustic scattering; Capacitive sensors; Fluctuations; Germanium alloys; Impurities; Optical scattering; Piezoresistance; Silicon alloys; Stress; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
  • Print_ISBN
    5-7782-0380-2
  • Type

    conf

  • DOI
    10.1109/SREDM.2002.1024314
  • Filename
    1024314
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2075807