Title :
Schottky barrier height engineering for next generation DRAM capacitors
Author :
Kyuho Cho ; Pesic, Milan ; Knebel, Steve ; Changhwa Jung ; Jaewan Chang ; Hanjin Lim ; Kolomiiets, Nadiia ; Afanas´ev, Valeri V. ; Schroeder, Uwe ; Mikolajick, Thomas
Author_Institution :
Semicond. Res. Center, Samsung Electron., Hwasung, South Korea
Abstract :
DRAM capacitors are reaching the scaling limit and new approaches are necessary to enable further reduction of the physical thickness of the capacitor dielectric. The Schottky Barrier Height (SBH) of a noble metal electrode (Pt) on atomic layer deposited ZrO2/Al2O3/ZrO2 (ZAZ, 6 nm) was evaluated and compared to a TiN electrode. Internal Photo Emission Spectroscopy (IPE) and Photoconductivity measurement (PC) were used to estimate the SBH and band gap, respectively. The SBH difference between the two electrodes was evaluated in comparison with a previously reported model. Finally, the impact of an increased SBH on dielectric scaling will be discussed based on a leakage current simulation of a ZrO2 capacitor.
Keywords :
DRAM chips; Schottky barriers; atomic layer deposition; capacitors; photoelectron spectra; zirconium compounds; IPE; PC; SBH; SBH difference; Schottky barrier height engineering; ZrO2-Al2O3-ZrO2; atomic layer deposition; band gap; capacitor dielectric; dielectric scaling; internal photo emission spectroscopy; leakage current simulation; metal electrode; next generation DRAM capacitors; photoconductivity measurement; physical thickness reduction; zirconium dioxie capacitor; Capacitors; Current measurement; Dielectric measurement; Electrodes; Leakage currents; Tin; DRAM capacitor; Schottky barrier height; ZrO2;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063790
