Title :
Calculation of z12 resistance for the FTSP transducer as an element of external electrical circuit
Author :
Gridchin, Alexander V.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The analytical equation for calculation of z12 resistance of the four-terminal silicon pressure piezotransducer (FTSP transducer) is presented in this paper. The main stages of this calculation in accordance with this equation are described in details. The elastic element (EE) with silicon crystal planes (100) and [110], p- and n-types of conductivity, and various ratios of length to width are analyzed. The optimal places for location of the current spread region (CSR) of the FTSP transducer on the surface of EE and the optimal angular orientations of CSR with respect to the main crystal axes are defined for all considered cases. As a result, the sensitivity of the classic FTSP transducer with rectangular form of the CSR is calculated. The results of this calculation allows to establish the expedience of application of (100) and [110] silicon crystal planes as well as elastic elements with great ratio of length to width.
Keywords :
network analysis; piezoelectric transducers; pressure transducers; sensitivity analysis; analytical equation; current spread region; elastic element; external electrical circuit; four-terminal silicon pressure piezotransducer; length to width ratios; n-type conductivity; optimal angular orientations; p-type conductivity; sensitivity; silicon(100); silicon(110); z12 resistance; Capacitive sensors; Conductivity; Doping; Electric resistance; Nonlinear equations; Piezoresistance; Silicon; Tensile stress; Transducers;
Conference_Titel :
Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
Print_ISBN :
5-7782-0380-2
DOI :
10.1109/SREDM.2002.1024318
