• DocumentCode
    2076033
  • Title

    Influence of radiation on current-voltage characteristics of CaF2/Si heterostructures

  • Author

    Baranov, Alexander V. ; Ushin, Vladimir A Il ; Velichko, Alexander A. ; Philimonova, Nina I.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • Volume
    1
  • fYear
    2002
  • fDate
    1-5 July 2002
  • Abstract
    Structures Al/CaF2/Si has been grown by method of the molecular-beam epitaxy (MBE) with thickness of film CaF2 from 0.1 up to 0.5 μm. Current-voltage characteristic (CVC) of Al/CaF2/Si structures before and after influence of radiation has been presented. It has been shown that the radiation has increased a current, but has not changed the mechanism of conductivity.
  • Keywords
    MIS structures; gamma-ray effects; molecular beam epitaxial growth; semiconductor-insulator boundaries; 0.1 to 0.5 micron; Al-CaF2-Si; conductivity mechanism; current-voltage characteristics; molecular-beam epitaxy; radiation influence; Calcium; Conductivity; Current measurement; Dielectrics; Electrical resistance measurement; Lattices; Molecular beam epitaxial growth; Silicon; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
  • Print_ISBN
    5-7782-0380-2
  • Type

    conf

  • DOI
    10.1109/SREDM.2002.1024323
  • Filename
    1024323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2076033