Title :
New insights in Z2-FET mechanisms at variable temperature
Author :
El Dirani, H. ; Onestas, L. ; Ferrari, P. ; Cristoloveneau, S. ; Solaro, Y. ; Fonteneau, P.
Author_Institution :
IMEP-LAHC Grenoble INP, Minatec Grenoble, Grenoble, France
Abstract :
The Z2-FET (Zero Impact Ionization and Subthreshold Slope FET), a recent sharp switching device with zero subthreshold swing and zero impact ionization, is considered for Electro-Static Discharge (ESD) protection of Fully Depleted SOI (FDSOI) circuits. We study the impact of low and high temperature on the device performance, showing its effect on the output characteristics, triggering voltage (Von) and leakage current (ILeak).
Keywords :
electrostatic discharge; field effect transistors; silicon-on-insulator; ESD protection; FDSOI circuit; Z2-FET mechanisms; electrostatic discharge protection; fully-depleted SOI circuit; leakage current; switching device; triggering voltage; zero impact ionization-subthreshold slope FET; zero-subthreshold swing; Electrostatic discharges; Field effect transistors; Impact ionization; Leakage currents; Logic gates; Switches; Temperature; Electrostatic Discharge (ESD); Fully Depleted SOI (FDSOI); Leakage Current; Temperature Dependence; Triggering Voltage; Zero Impact Ionization and Subthreshold Slope FET (Z2-FET);
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063796
