Title :
GeSn for nanoelectronic and optical applications
Author :
Buca, D. ; Wirths, S. ; Stange, D. ; von den Driesch, Nils ; Stoica, T. ; Grutzmacher, D. ; Mantl, S. ; Ikonic, Z. ; Hartmann, J.-M.
Author_Institution :
Peter Grunberg Inst. 9 (PGI 9 IT), Forschungszentrum Juelich, Julich, Germany
Abstract :
Progress of Si based devices and technology is in strong interdependence with the development of new materials. Presently the list of group IV semiconductors is being extended beyond Ge to the semimetal Sn. Investigation in group IV semiconductors has been extended above strain engineering and Ge to the next element in group IV, the semimetal Sn. Significant efforts have been directed toward the epitaxial growth of GeSn binary and SiGeSn ternary alloys. In this work we discuss the growth and material properties of GeSn alloys and their application possibilities in photonic and nanoelectronic devices.
Keywords :
elemental semiconductors; germanium alloys; integrated optoelectronics; nanoelectronics; silicon alloys; ternary semiconductors; tin alloys; SiGeSn; epitaxial growth; group IV semiconductors; nanoelectronic device; photonic device; semimetal tin; strain engineering; ternary alloys; Photonic band gap; Silicon; Temperature measurement; Tensile strain; Tin; GeSn; direct bandgap; gate staks; strained Ge;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063797
