GeSn for nanoelectronic and optical applications

Author

Buca, D. ; Wirths, S. ; Stange, D. ; von den Driesch, Nils ; Stoica, T. ; Grutzmacher, D. ; Mantl, S. ; Ikonic, Z. ; Hartmann, J.-M.

Author_Institution

Peter Grunberg Inst. 9 (PGI 9 IT), Forschungszentrum Juelich, Julich, Germany

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

157

Lastpage

160

Abstract

Progress of Si based devices and technology is in strong interdependence with the development of new materials. Presently the list of group IV semiconductors is being extended beyond Ge to the semimetal Sn. Investigation in group IV semiconductors has been extended above strain engineering and Ge to the next element in group IV, the semimetal Sn. Significant efforts have been directed toward the epitaxial growth of GeSn binary and SiGeSn ternary alloys. In this work we discuss the growth and material properties of GeSn alloys and their application possibilities in photonic and nanoelectronic devices.

Keywords

elemental semiconductors; germanium alloys; integrated optoelectronics; nanoelectronics; silicon alloys; ternary semiconductors; tin alloys; SiGeSn; epitaxial growth; group IV semiconductors; nanoelectronic device; photonic device; semimetal tin; strain engineering; ternary alloys; Photonic band gap; Silicon; Temperature measurement; Tensile strain; Tin; GeSn; direct bandgap; gate staks; strained Ge;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063797

Filename

7063797