DocumentCode
2076193
Title
Features of anisotropic etching of silicon
Author
Dikareva, Regina P. ; Kamenskaja, Anna V. ; Langueva, Darya A. ; Zaozyornova, S.V.
Author_Institution
Novosibirsk State Tech. Univ., Russia
Volume
1
fYear
2002
fDate
1-5 July 2002
Abstract
The purpose of our work is to research of the process of AE of Si plates with orientation {100} and {110}, and also consideration of dynamics of change of the etched figure´s form, dependence on their form of a concrete mask, dependence of speeds of etching on concentration etchant and its temperatures. Experimental results compared to results of modeling with the purpose of a correcting the program AE developed earlier on faculty of SD a ME.
Keywords
crystal orientation; etching; silicon; anisotropic etching; concrete mask; etchant concentration; etchant temperatures; silicon {100}; silicon {110}; Anisotropic magnetoresistance; Chemicals; Concrete; Etching; Laboratories; Microelectronics; Silicon; Spirals; Temperature dependence; Water heating;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
Print_ISBN
5-7782-0380-2
Type
conf
DOI
10.1109/SREDM.2002.1024329
Filename
1024329
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