Title :
Prospects of using Si/CaF2 structures in pressure sensors
Author :
Shmakov, Nikolay M.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The present work examines Si/CaF2 structures. Comparative analysis of existing structures of membrane tensoresistive sensors has shown the main obstacle in their developing: a problem of thickness control and reproducibility of an elastic element. It causes large diversity of strain sensor parameters, affects their sensitivity and linear range of transformation. However, SOF structures are vantage in this respect since layers are build by MBE method, hence one can obtain submicron layers and supervise their growth easily. And elastic element reproducibility is monitored by anisotropic silicon etching.
Keywords :
calcium compounds; etching; molecular beam epitaxial growth; pressure sensors; semiconductor-insulator boundaries; silicon; MBE method; SOF structures; Si-CaF2; anisotropic silicon etching; comparative analysis; elastic element reproducibility; pressure sensors; strain sensor parameters; tensoresistive sensors; thickness control problem; Biomembranes; Calcium; Capacitive sensors; Lattices; Mechanical sensors; Microelectronics; Reproducibility of results; Sensor phenomena and characterization; Silicon; Temperature sensors;
Conference_Titel :
Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
Print_ISBN :
5-7782-0380-2
DOI :
10.1109/SREDM.2002.1024330
