Prospects of using Si/CaF2 structures in pressure sensors

The present work examines Si/CaF₂ structures. Comparative analysis of existing structures of membrane tensoresistive sensors has shown the main obstacle in their developing: a problem of thickness control and reproducibility of an elastic element. It causes large diversity of strain sensor parameters, affects their sensitivity and linear range of transformation. However, SOF structures are vantage in this respect since layers are build by MBE method, hence one can obtain submicron layers and supervise their growth easily. And elastic element reproducibility is monitored by anisotropic silicon etching.