DocumentCode
2076264
Title
An Efficient Technique for the Small-Signal Analysis of Semiconductor Devices
Author
Santos, J.C.A. ; Howes, M.J. ; Snowden, C.M.
Author_Institution
Microwave Solid State Group, Dept. Electronic and Electrical Eng., The University of Leeds, Leeds, LS2 QJT, UK.
Volume
1
fYear
1990
fDate
9-13 Sept. 1990
Firstpage
761
Lastpage
765
Abstract
A fast and efficient technique for the small-signal analysis of semiconductor devices from physical simulations is presented. Small-signal parameters are obtained by the use of the Sinusoidal Steady-State Method. The new technique reduces the order of the overall problem to the same order of the dependent variables for a DC simulation wich produces a saving of nearly 50% of computer CPU time over the conventional method.
Keywords
Analytical models; Boundary conditions; Charge carrier processes; Computational modeling; Computer simulation; Finite element methods; Jacobian matrices; Poisson equations; Semiconductor devices; Steady-state;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1990. 20th European
Conference_Location
Budapest, Hungary
Type
conf
DOI
10.1109/EUMA.1990.336135
Filename
4136092
Link To Document