DocumentCode :
2076264
Title :
An Efficient Technique for the Small-Signal Analysis of Semiconductor Devices
Author :
Santos, J.C.A. ; Howes, M.J. ; Snowden, C.M.
Author_Institution :
Microwave Solid State Group, Dept. Electronic and Electrical Eng., The University of Leeds, Leeds, LS2 QJT, UK.
Volume :
1
fYear :
1990
fDate :
9-13 Sept. 1990
Firstpage :
761
Lastpage :
765
Abstract :
A fast and efficient technique for the small-signal analysis of semiconductor devices from physical simulations is presented. Small-signal parameters are obtained by the use of the Sinusoidal Steady-State Method. The new technique reduces the order of the overall problem to the same order of the dependent variables for a DC simulation wich produces a saving of nearly 50% of computer CPU time over the conventional method.
Keywords :
Analytical models; Boundary conditions; Charge carrier processes; Computational modeling; Computer simulation; Finite element methods; Jacobian matrices; Poisson equations; Semiconductor devices; Steady-state;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1990. 20th European
Conference_Location :
Budapest, Hungary
Type :
conf
DOI :
10.1109/EUMA.1990.336135
Filename :
4136092
Link To Document :
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