• DocumentCode
    2076276
  • Title

    Losing of the chemically active particles in plasma CF2Cl2/O2

  • Author

    Bogomolov, Boric K.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • Volume
    1
  • fYear
    2002
  • fDate
    1-5 July 2002
  • Abstract
    The research of the process of plasma etching of silicon in plasma CF2Cl2>/O2 is carried out with the equipment of "Plasma-600". The covering of quartz walls of the reactor with fluorine polymer results in increasing the speed of etching. The increasing of the concentration of chemically active particles (CAP) observed in experiment, testifies to decreasing the probability of destruction of CAP 10 times less as a result of one collision with the surface of the reactor covered with the fluorine polymer.
  • Keywords
    reaction kinetics; silicon; sputter etching; Plasma-600; chemically active particles; fluorine polymer; plasma etching; Chemicals; Equations; Etching; Inductors; Plasma applications; Plasma chemistry; Plasma temperature; Polymers; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
  • Print_ISBN
    5-7782-0380-2
  • Type

    conf

  • DOI
    10.1109/SREDM.2002.1024331
  • Filename
    1024331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2076276