Title :
Losing of the chemically active particles in plasma CF2Cl2/O2
Author :
Bogomolov, Boric K.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The research of the process of plasma etching of silicon in plasma CF2Cl2>/O2 is carried out with the equipment of "Plasma-600". The covering of quartz walls of the reactor with fluorine polymer results in increasing the speed of etching. The increasing of the concentration of chemically active particles (CAP) observed in experiment, testifies to decreasing the probability of destruction of CAP 10 times less as a result of one collision with the surface of the reactor covered with the fluorine polymer.
Keywords :
reaction kinetics; silicon; sputter etching; Plasma-600; chemically active particles; fluorine polymer; plasma etching; Chemicals; Equations; Etching; Inductors; Plasma applications; Plasma chemistry; Plasma temperature; Polymers; Silicon; Testing;
Conference_Titel :
Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
Print_ISBN :
5-7782-0380-2
DOI :
10.1109/SREDM.2002.1024331
