Title :
Reverse-order source/drain formation with double offset spacer (RODOS) for CMOS low-power, high-speed and low-noise amplifiers
Author :
Choi, Woo Young ; Lee, Jong Duk ; Park, Byung-Gook
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
RODOS (Reverse-Order source/drain formation with Double Offset Spacer) was proposed for low-power, high-speed and low-noise amplifiers. Relying on simulation data, we confirmed the high feasibility of the RODOS process. It showed improved performance in linearity (VIP3). Additionally, by optimizing process parameters, we achieved small gate delay (CV/I) and low static/dynamic power consumption. The process satisfied most of the requirements of LOP and LSTP in ITRS 2002. Finally, we found that devices with the RODOS structure can be a promising alternative to implement low-power, high-speed and low-noise amplifiers for radio on a chip.
Keywords :
CMOS analogue integrated circuits; MOSFET; amplifiers; circuit optimisation; circuit simulation; high-speed integrated circuits; integrated circuit noise; intermodulation; low-power electronics; transceivers; CMOS high-speed amplifiers; CMOS low-noise amplifiers; CMOS low-power amplifiers; ITRS 2002; LOP requirements; LSTP requirements; RODOS; double offset spacer; gate delay; generic transceiver; intermodulation products; linearity performance; low static/dynamic power consumption; process parameter optimization; radio on a chip; reverse-order source/drain formation; simulation data; CMOS technology; Circuits; Degradation; Energy consumption; Linearity; Low-noise amplifiers; Permission; Radio frequency; Space technology; Transceivers;
Conference_Titel :
Low Power Electronics and Design, 2003. ISLPED '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
1-58113-682-X
DOI :
10.1109/LPE.2003.1231860
