Surface structuring of ZnO wafers with femtosecond laser pulses: From laser-induced periodic surface structures to doping

Author

Dev, A. ; Schneider, A. ; Sebald, K. ; Voss, T.

Author_Institution

Inst. of Solid State Phys., Univ. of Bremen, Bremen, Germany

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

We investigated surface-structuring and doping of ZnO wafers using the output pulses of a regeneratively amplified Titanium-Sapphire laser (2 mJ, 1 kHz, 100 fs, 800 nm). The wide bandgap semiconductor ZnO is frequently used for UV photodetection, optoelectronic and sensing applications.

Keywords

II-VI semiconductors; laser beam effects; laser materials processing; optical pulse generation; semiconductor doping; solid lasers; zinc compounds; UV photodetection; ZnO wafers; doping; energy 2 mJ; femtosecond laser pulses; frequency 1 kHz; laser induced periodic surface structures; optoelectronic applications; output pulses; sensing applications; surface structuring; time 100 fs; titanium sapphire laser; wavelength 800 nm; wide bandgap semiconductor; Doping; Laser theory; Periodic structures; Surface emitting lasers; Ultrafast optics; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5943355

Filename

5943355