Title :
Disilane and trimethylsilane as precursors for RP-CVD growth of Si1−yCy epilayers on Si(001)
Author :
Colston, Gerard ; Myronov, Maksym ; Rhead, Stephen ; Leadley, David
Author_Institution :
Dept. of Phys., Univ. of Warwick, Coventry, UK
Abstract :
Strained Si1-yCy epilayers with up to 1.48% C content have been grown on Si(001) by RP-CVD using the low-cost precursors disilane and trimethylsilane. These epilayers, with higher C content, were found to form point defects throughout growth resulting in amorphous hillocks forming on the epilayer surface. The size and density of these surface defects increases with C content and epilayer thickness. With substitutional C compositions above 1.48% the hillocks fuse on the surface and subsequent amorphous growth occurs.
Keywords :
amorphous semiconductors; chemical vapour deposition; epitaxial growth; point defects; semiconductor epitaxial layers; semiconductor growth; silicon compounds; wide band gap semiconductors; RP-CVD growth; Si; Si(001) surface; Si1-yCy; amorphous hillocks; disilane precursor; epilayer surface; epilayer thickness; hillocks fuse; point defects; strained Si1-yCy epilayers; surface defect density; surface defect size; trimethylsilane precursor; Lattices; Metals; Rough surfaces; Silicon; Strain; Surface morphology; Surface roughness; Defects; Epitaxy; RP-CVD; Si1−yCy;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063814
