Disilane and trimethylsilane as precursors for RP-CVD growth of Si1−yCy epilayers on Si(001)

Author

Colston, Gerard ; Myronov, Maksym ; Rhead, Stephen ; Leadley, David

Author_Institution

Dept. of Phys., Univ. of Warwick, Coventry, UK

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

225

Lastpage

228

Abstract

Strained Si_1-yC_y epilayers with up to 1.48% C content have been grown on Si(001) by RP-CVD using the low-cost precursors disilane and trimethylsilane. These epilayers, with higher C content, were found to form point defects throughout growth resulting in amorphous hillocks forming on the epilayer surface. The size and density of these surface defects increases with C content and epilayer thickness. With substitutional C compositions above 1.48% the hillocks fuse on the surface and subsequent amorphous growth occurs.

Keywords

amorphous semiconductors; chemical vapour deposition; epitaxial growth; point defects; semiconductor epitaxial layers; semiconductor growth; silicon compounds; wide band gap semiconductors; RP-CVD growth; Si; Si(001) surface; Si_1-yC_y; amorphous hillocks; disilane precursor; epilayer surface; epilayer thickness; hillocks fuse; point defects; strained Si_1-yC_y epilayers; surface defect density; surface defect size; trimethylsilane precursor; Lattices; Metals; Rough surfaces; Silicon; Strain; Surface morphology; Surface roughness; Defects; Epitaxy; RP-CVD; Si1−yCy;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063814

Filename

7063814