A simulation study of short channel effects with a QET model based on Fermi-Dirac statistics for Si, Ge and III-V MOSFETs

In this paper, the quantum confinement and short channel effects of Si, Ge, and In_0.53Ga_0.47As n-MOSFETs are evaluated using a quantum energy transport(QET) model based on Fermi-Dirac statistics. Both bulk and double-gate n-MOSFETs are simulated. The charge control by the gate is strongly reduced in In_0.53Ga_0.47As bulk n-MOSFETs due to low effective mass, high permittivity and high degeneracy material. This results in the degradation of short channel effects. The double-gate structure is effective in the suppression of short channel effects for Si and Ge n-MOSFETs. In In_0.53Ga_0.47As n-MOSFETs, the improvement of subthreshold slope by the double-gate structure is decreased due to the high degeneracy material.