Title :
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools
Author :
Betti Beneventi, Giovanni ; Reggiani, Susanna ; Gnudi, Antonio ; Gnani, Elena ; Aliane, Alireza ; Collaert, Nadine ; Mocuta, Anda ; Thean, Aaron ; Baccarani, Giorgio
Author_Institution :
DEI, Univ. of Bologna, Bologna, Italy
Abstract :
A simple analytical model of thin-body In0.53Ga0.47As-on-InP MOSFET low-field electron mobility suitable for integration in Technology-CAD (TCAD) tools is presented. Phonon, Coulomb and surface roughness scattering are accounted for. In order to characterize the phonon scattering contribution, an expression for the device effective thickness is derived from 1-D Schroedinger-Poisson simulations. The model is validated through comparison with experimental CG-Vgs and Id-Vgs curves collected on transistors with body thicknesses down to 5 nm.
Keywords :
III-V semiconductors; MOSFET; electron mobility; electron-phonon interactions; gallium arsenide; indium compounds; semiconductor device models; surface roughness; surface scattering; technology CAD (electronics); 1-D Schroedinger-Poisson simulations; Coulomb scattering; In0.53Ga0.47As-InP; TCAD tools integration; device effective thickness; low-field electron mobility; phonon scattering; surface roughness scattering; technology-CAD; thin-body MOSFET; Analytical models; Data models; Phonons; Rough surfaces; Scattering; Semiconductor device modeling; Surface roughness;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063818
