Title :
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals
Author :
Jiang Cao ; Pala, Marco ; Cresti, Alessandro ; Esseni, David
Author_Institution :
IMEP, Univ. Grenoble Alpes, Grenoble, France
Abstract :
We present a self-consistent quantum simulation of an MoS2-WTe2 inter-layer Tunnel Field-Effect Transistor (TFET). Our calculations are based on the non-equilibrium Green´s function (NEGF) formalism with electron-phonon scattering, and accurately account for the device electrostatics by a self-consistent coupling to the Poisson equation. Our results predict an extremely steep sub-threshold swing (SS<;30mV/dec), which is also robust against the channel-length scaling for a carefully designed structure.
Keywords :
Green´s function methods; MOSFET; Poisson equation; electrostatics; molybdenum compounds; tungsten compounds; tunnel transistors; 2D gapped crystals; MoS2-WTe2; NEGF formalism; Poisson equation; channel-length scaling; device electrostatics; electron-phonon scattering; heterojunction inter-layer TFET; nonequilibrium Greens function; quantum simulation; self-consistent coupling; tunnel FET; tunnel field-effect transistor; Chemicals; Couplings; Current density; Doping; Logic gates; Semiconductor process modeling; Tunneling; NEGF; Quantum simulation; Transition metal dichalcogenide; Tunnel FET; subthermal sub-threshold swing;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063819
