A study on the characteristics of TiN thin films deposited by DC pulsed PA-MOCVD

Author

Park, Yong-Gyun ; Lee, Young-Seop ; Lee, Tae-Soo ; Lee, Sung-Jae ; Chun, Hui-Gon ; Cho, Tong-Yul

Author_Institution

Sch. of Mater. Sci. & Metall. Eng., Ulsan Univ., South Korea

Volume

2

fYear

2001

fDate

26 Jun-3 Jul 2001

Firstpage

239

Abstract

The TiN thin films were prepared using Ti precursor, tetrakis(diethylamido)titanium and ammonia on 300 nm SiO₂ by DC pulsed PA-MOCVD. The characteristics of TiN thin films had been studied by XRD, AFM, FE-SEM analyses and sheet resistance

Keywords

MOCVD; MOCVD coatings; X-ray diffraction; atomic force microscopy; diffusion barriers; electric resistance; field emission electron microscopy; grain size; plasma CVD; plasma CVD coatings; scanning electron microscopy; surface topography; thin films; titanium compounds; wear resistant coatings; AFM; DC pulsed plasma assisted-MOCVD; TiN; XRD; crystallinity; deposition rate; diffusion barrier materials; duty ratio; field emission SEM; grain size; ion bombardment effect; nitride thin films; sheet resistance; surface roughness; Chemical vapor deposition; Inorganic materials; MOCVD; Plasma properties; Plasma temperature; Sputtering; Tin; Titanium; Transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 2001. KORUS '01. Proceedings. The Fifth Russian-Korean International Symposium on

Conference_Location

Tomsk

Print_ISBN

0-7803-7008-2

Type

conf

DOI

10.1109/KORUS.2001.975241

Filename

975241