Title :
Nanoscale characterization of MOS systems by microwaves: Dopant profiling calibration
Author :
Michalas, L. ; Lucibello, A. ; Joseph, C.H. ; Brinciotti, E. ; Kienberger, F. ; Proietti, E. ; Marcelli, R.
Author_Institution :
Inst. for Microelectron. & Microsyst., Rome, Italy
Abstract :
The paper presents a calibration of scanning microwave microscopy signals for doping profiling in MOS systems. The experimentally obtained S-parameters are matched through a linear relation to the calculated MOS system capacitance and then to doping. The proposed approach is verified by simulations with the equivalent LCR circuit as well as by experimental results obtained on a calibration sample with differently doped areas.
Keywords :
MIS devices; S-parameters; calibration; equivalent circuits; microwave devices; microwave measurement; semiconductor doping; MOS system; S-parameter; dopant profiling calibration; equivalent LCR circuit; nanoscale characterization; scanning microwave microscopy signal; Calibration; Capacitance; Doping; Microscopy; Microwave circuits; Microwave imaging; Calibration; Doping Profiling; RF Characterization; Scanning Microwave Microscopy (SMM); Semiconductors;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063825
