DocumentCode
2076696
Title
A simple analytical Variable Barrier Transistor drain current model
Author
Moldovan, Oana ; Lime, Francois ; Iniguez, Benjamin ; Barraud, Sylvain
Author_Institution
Dept. of Electron., Electr. & Autom., Eng., Univ. Rovira & Virgili, Tarragona, Spain
fYear
2015
fDate
26-28 Jan. 2015
Firstpage
273
Lastpage
276
Abstract
In this paper we present, a simple analytical model for the computation of the drain current in a new type of transistor, a VBT (Variable Barrier Transistor). A good agreement between our results and experimental data proves the accuracy of this model. The experimental measurements show that the Ion/Ioff ratio of this device can be improved, as compared to the classical transistor. Our model reproduces these results.
Keywords
semiconductor device models; transistors; Ion-Ioff ratio; VBT; drain current model; variable barrier transistor; Analytical models; Logic gates; MOSFET; Semiconductor device modeling; Silicon; Tunneling; Landauer theory; SGT; VBT; analytical model; thermionic current;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location
Bologna
Type
conf
DOI
10.1109/ULIS.2015.7063826
Filename
7063826
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