Sub-22nm scaling of UTB2SOI devices for Multi-Vt applications

Author

Diaz-Llorente, C. ; Medina-Bailon, C. ; Sampedro, C. ; Gamiz, F. ; Godoy, A. ; Donetti, L.

Author_Institution

Nanoelectron. Res. Group, Univ. de Granada, Granada, Spain

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

281

Lastpage

284

Abstract

The development of a Hybrid Technology and new co-integration schemes of Bulk and SOI devices verify the need to scale sub-22nm FDSOI devices considering BOX engineering including UTBOX, Back-Plane (BP) and Back-Bias (BB) polarization, as breakthroughs to achieve a greater reduction of power consumption. This work presents a Multi-Subband Ensemble Monte Carlo (MSB-EMC) study of the scalability of ultrathin-body and buried oxide (UTB2SOI) devices, showing their potential for Multi-V_T designs. Tuning V_T modifies the electrical properties of the device and offers a range of I_on, I_off and DIBL appropriate for different applications.

Keywords

Monte Carlo methods; electric properties; power consumption; scaling circuits; semiconductor device models; silicon-on-insulator; BOX engineering; FDSOI devices; MSB-EMC study; Si; UTB2SOI device scaling; UTBOX; back-bias polarization; back-plane polarization; bulk devices; co-integration schemes; electrical properties; hybrid technology; multiVT applications; multisubband ensemble Monte Carlo study; power consumption; size 22 nm; Degradation; Electric potential; Electrostatics; Logic gates; Monte Carlo methods; Performance evaluation; Power demand;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063828

Filename

7063828