Title :
Determination of ad hoc deposited charge on bare SOI wafers
Author :
Fernandez, C. ; Rodriguez, N. ; Marquez, C. ; Gamiz, F.
Author_Institution :
Nanoelectron. Res. Group, CITIC-Univ. of Granada, Granada, Spain
Abstract :
This work develops an analytical model which correlates the changes of the threshold voltages in Pseudo-MOSFET structures with the charge intentionally placed on the surface of the native oxide. The model has been validated through experimental I-V characteristics obtained when the surface is physically altered with an APTES solution. The measurements were performed in 15 MESA isolated SOI cells. These results open the path for the potential use of the bare SOI wafers as a platform for charge-based sensing applications.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; APTES solution; I-V characteristics; SOI cells; SOI wafers; ad hoc deposited charge; charge-based sensing; native oxide; pseudo-MOSFET structure; threshold voltage; Charge carrier processes; Electric potential; Films; Semiconductor device modeling; Silicon; Surface treatment; Threshold voltage; Pseudo-MOSFET; SOI; charge sensing; threshold voltage;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063830
