Gas-phase technology and structure of films based on C60 fullerene

The technology of C₆₀ fullerite film preparation by means of gas-phase deposition and the structure of the films are described. A flow three-channel set-up was used to obtain fullerene films. The films were deposited in an inert gas flow under reduced pressure onto a cooled silicon or sapphire substrate placed inside the reaction chamber. This set-up allows one to obtain films of pure fullerenes and to synthesise films from fullerene compounds and doped fullerenes. The film structure was investigated by FESEM and SEM techniques. All samples show columnar structure with a high level of porosity. The synthesis of fullerene-based films for use in electronics is shown to be promising. For example, experiments confirm the possibility of using fullerene films to produce humidity and thermal sensors. It is also possible to employ the sensitivity of these films to isostatic pressure. Experiments with C₆₀-Cu-J films shown quite strong dependence on the pressure of different sorts of medium-gases that could be used as gas-sensitive sensors. The structure and preparation technology of resistive sensors based on fullerene films are described