• DocumentCode
    2076880
  • Title

    Quantum light generation by semiconductor devices

  • Author

    Shields, A.J. ; Bennett, A.J. ; Stevenson, R.M. ; Salter, C.L. ; Patel, R.B. ; Pooley, M.A. ; Ward, M.B. ; De la Giroday, A. Boyer ; Skold, N. ; Farrer, I. ; Nicoll, C.A. ; Ritchie, D.A.

  • Author_Institution
    Toshiba Res. Eur. Ltd., Cambridge, UK
  • fYear
    2011
  • fDate
    22-26 May 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Often referred to as "artificial atoms", quantum dots possess discrete energy levels that make them viable hosts for electronic qubits or sources of photonic qubits. However, unlike atoms, no two quantum dots are alike, a complication for quantum information schemes requiring either indistinguishable electronic states in different quantum dots, or indistinguishable photons emitted from different quantum dots. We demonstrate here that the transition energy of a quantum dot can be continuously varied, over a range much larger than the linewidth, using an electric field applied in a diode structure. By tuning individual quantum dots to identical energies we demonstrate two-photon interference of photons emitted from truly remote, independent quantum dots, thereby overcoming a significant barrier to scalable quantum information processing.
  • Keywords
    quantum dots; quantum optics; semiconductor devices; artificial atoms; diode structure; electric field; electronic qubits; photonic qubits; quantum dots; quantum information processing; quantum light generation; semiconductor devices; two-photon interference;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
  • Conference_Location
    Munich
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-0533-5
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/CLEOE.2011.5943377
  • Filename
    5943377