DocumentCode
2076880
Title
Quantum light generation by semiconductor devices
Author
Shields, A.J. ; Bennett, A.J. ; Stevenson, R.M. ; Salter, C.L. ; Patel, R.B. ; Pooley, M.A. ; Ward, M.B. ; De la Giroday, A. Boyer ; Skold, N. ; Farrer, I. ; Nicoll, C.A. ; Ritchie, D.A.
Author_Institution
Toshiba Res. Eur. Ltd., Cambridge, UK
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
1
Abstract
Often referred to as "artificial atoms", quantum dots possess discrete energy levels that make them viable hosts for electronic qubits or sources of photonic qubits. However, unlike atoms, no two quantum dots are alike, a complication for quantum information schemes requiring either indistinguishable electronic states in different quantum dots, or indistinguishable photons emitted from different quantum dots. We demonstrate here that the transition energy of a quantum dot can be continuously varied, over a range much larger than the linewidth, using an electric field applied in a diode structure. By tuning individual quantum dots to identical energies we demonstrate two-photon interference of photons emitted from truly remote, independent quantum dots, thereby overcoming a significant barrier to scalable quantum information processing.
Keywords
quantum dots; quantum optics; semiconductor devices; artificial atoms; diode structure; electric field; electronic qubits; photonic qubits; quantum dots; quantum information processing; quantum light generation; semiconductor devices; two-photon interference;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location
Munich
ISSN
Pending
Print_ISBN
978-1-4577-0533-5
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/CLEOE.2011.5943377
Filename
5943377
Link To Document