Systematic study of the palladium-graphene contact

Author

Gahoi, A. ; Passi, V. ; Kataria, S. ; Wagner, S. ; Bablich, A. ; Lemme, M.C.

Author_Institution

Sch. of Sci. & Technol., Univ. of Siegen, Siegen, Germany

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

309

Lastpage

312

Abstract

We report a systematic study of the contact resistance present at the interface between palladium (Pd) and monolayer graphene measured at different conditions. Measurements in vaccum appear to increase the contact resistance. However, this is attributed to a shift of the charge neutrality point due to a reduction of random molecular doping and/or humidity. Post-processing rapid thermal annealing (RTA) was carried out to study its influence on the contact resistance. The contact resistance is reduced by approximately 50% after RTA at 450°C in hydrogen/argon (5%/95%) environment.

Keywords

contact resistance; graphene; palladium; rapid thermal annealing; charge neutrality point; contact resistance; hydrogen-argon environment; monolayer graphene; palladium-graphene contact; post-processing RTA; post-processing rapid thermal annealing; random molecular doping; temperature 450 degC; Contact resistance; Electrical resistance measurement; Graphene; Metals; Resistance; Silicon; Substrates; TLM; contact resistance; graphene; graphene transfer; rapid thermal annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063835

Filename

7063835