Title :
Systematic study of the palladium-graphene contact
Author :
Gahoi, A. ; Passi, V. ; Kataria, S. ; Wagner, S. ; Bablich, A. ; Lemme, M.C.
Author_Institution :
Sch. of Sci. & Technol., Univ. of Siegen, Siegen, Germany
Abstract :
We report a systematic study of the contact resistance present at the interface between palladium (Pd) and monolayer graphene measured at different conditions. Measurements in vaccum appear to increase the contact resistance. However, this is attributed to a shift of the charge neutrality point due to a reduction of random molecular doping and/or humidity. Post-processing rapid thermal annealing (RTA) was carried out to study its influence on the contact resistance. The contact resistance is reduced by approximately 50% after RTA at 450°C in hydrogen/argon (5%/95%) environment.
Keywords :
contact resistance; graphene; palladium; rapid thermal annealing; charge neutrality point; contact resistance; hydrogen-argon environment; monolayer graphene; palladium-graphene contact; post-processing RTA; post-processing rapid thermal annealing; random molecular doping; temperature 450 degC; Contact resistance; Electrical resistance measurement; Graphene; Metals; Resistance; Silicon; Substrates; TLM; contact resistance; graphene; graphene transfer; rapid thermal annealing;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063835
