Ultra-low-power diodes using junctionless nanowire transistors

Author

de Souza, M. ; Doria, R.T. ; Trevisoli, R.D. ; Pavanello, M.A.

Author_Institution

Electr. Eng. Dept., Centra Univ. da FEI, Sao Bernardo, Brazil

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

313

Lastpage

316

Abstract

In this work, the performance of Ultra-Low-Power (ULP) Diodes implemented with Junctionless Nanowire Transistors (JNTs) is presented for the first time. Experimental data of ULP Diodes formed by Junctionless Nanowire CMOS Transistors show that nanowire width, length and doping concentration play an important role in the reverse current of the diodes, affecting the on-off current ratio.

Keywords

CMOS integrated circuits; low-power electronics; nanowires; semiconductor diodes; semiconductor doping; JNT; ULP diodes; diode reverse current; doping concentration; junctionless nanowire CMOS transistors; junctionless nanowire transistors; nanowire width; on-off current ratio; ultralow-power diodes; CMOS integrated circuits; Doping; MOS devices; Semiconductor diodes; Standards; Threshold voltage; Transistors; junctionless nanowire transistors; ultra-low-power diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063836

Filename

7063836

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2076925