Title :
Ultra-low-power diodes using junctionless nanowire transistors
Author :
de Souza, M. ; Doria, R.T. ; Trevisoli, R.D. ; Pavanello, M.A.
Author_Institution :
Electr. Eng. Dept., Centra Univ. da FEI, Sao Bernardo, Brazil
Abstract :
In this work, the performance of Ultra-Low-Power (ULP) Diodes implemented with Junctionless Nanowire Transistors (JNTs) is presented for the first time. Experimental data of ULP Diodes formed by Junctionless Nanowire CMOS Transistors show that nanowire width, length and doping concentration play an important role in the reverse current of the diodes, affecting the on-off current ratio.
Keywords :
CMOS integrated circuits; low-power electronics; nanowires; semiconductor diodes; semiconductor doping; JNT; ULP diodes; diode reverse current; doping concentration; junctionless nanowire CMOS transistors; junctionless nanowire transistors; nanowire width; on-off current ratio; ultralow-power diodes; CMOS integrated circuits; Doping; MOS devices; Semiconductor diodes; Standards; Threshold voltage; Transistors; junctionless nanowire transistors; ultra-low-power diode;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063836
