Impact of back plane on the carrier mobility in 28nm UTBB FDSOI devices, for ESD applications

Author

Athanasiou, S. ; Galy, P. ; Cristoloveanu, S.

Author_Institution

STMicroelectron., Crolles, France

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

317

Lastpage

320

Abstract

We present measurements and parameter extraction performed on 28nm UTBB FDSOI MOSFETs with two different Back Plane configurations (p-type and n-type BP). The change in BP doping and work function affects directly the back-channel characteristics and indirectly, via interface coupling, the front-channel properties. We investigate the parameters relevant for the design of ESD protection devices: threshold voltage shift and electron mobility in long and short transistors.

Keywords

MOSFET; electron mobility; electrostatic discharge; silicon-on-insulator; work function; BP doping; ESD protection device applications; UTBB FDSOI MOSFET devices; back plane configurations; back-channel characteristics; carrier mobility; electron mobility; electrostatic discharge; front-channel properties; interface coupling; long short transistors; measurement extraction; parameter extraction; size 28 nm; threshold voltage shift; ultrathin body and buried oxide-fully depleted silicon-on-insulator; work function; Doping; Electron mobility; Electrostatic discharges; Logic gates; MOSFET; Robustness; Threshold voltage; CMOS; ESD; FDSOI; Mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063837

Filename

7063837