DocumentCode :
2077029
Title :
Plasma characterisation in PECVD deposition of diamond
Author :
Graham, W.G.
Author_Institution :
Dept. of Phys., Queen´´s Univ., Belfast, UK
fYear :
1995
fDate :
34788
Firstpage :
42522
Lastpage :
42524
Abstract :
The focus of the initial work was the determination of the hydrogen atom density in the plasma since H atoms are thought to be of importance in determining the diamond film quality. The film quality was assessed by an in situ measurement of the refractive index of the depositing films. The absolute atomic hydrogen fraction in the plasma was measured using a two photon LIF technique. These measurements were then used to assess the possibility of using a combination of electrostatic probe and emission measurements to determine dissociation rates in molecular gas plasmas. The PECVD system had a single 13.56 MHz driven electrode with the metal vacuum vessel acting as the grounded electrode. The operating gas was predominately hydrogen with small (<5%) percentages of C2H2 added
Keywords :
diamond; elemental semiconductors; plasma CVD; plasma CVD coatings; plasma diagnostics; semiconductor growth; semiconductor thin films; C; H-atom density; PECVD deposition; diamond; electrostatic probe; emission measurements; plasma characterisation; refractive index; two photon LIF techniqu;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Application of Plasma Technology to Surface Processing - Recent Developments in Modelling and Diagnostics for Process Control and Optimization, IEE Colloquium on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19950906
Filename :
473074
Link To Document :
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