• DocumentCode
    2077246
  • Title

    InP Based Monolithic Integrated HEMT Amplifiers and Their Material Sensitivity

  • Author

    Weiss, Matthias ; Ng, Geok Ing ; Pavlidis, Dimitris

  • Author_Institution
    Center for Space Terahertz Technology & Center for High Frequency Microelectronics, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122
  • Volume
    2
  • fYear
    1990
  • fDate
    9-13 Sept. 1990
  • Firstpage
    959
  • Lastpage
    964
  • Abstract
    Experimental results on InP based In0.53+xGa0.47-xAs/In0.52Al0.48As HEMT monolithic integrated amplifiers are reported demonstrating the feasibility of this technology. Strained heteroepitaxy (x¿0.0) proved to enhance the device performance and upper frequency limits and was used for the MMIC-realization. More than 15 dB of gain were obtained from 6 to 9.5 GHz. The maximum gain was 22 dB and the return loss better than - 10 dB. In spite of the strained heteroepitaxy which can raise material control questions for MMIC realizations the experimental results for the samples (x=0.07 and x=0.22) showed good agreement with design objectives.
  • Keywords
    Composite materials; Degradation; Frequency; Gain; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1990. 20th European
  • Conference_Location
    Budapest, Hungary
  • Type

    conf

  • DOI
    10.1109/EUMA.1990.336189
  • Filename
    4136126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2077246