InP Based Monolithic Integrated HEMT Amplifiers and Their Material Sensitivity

Experimental results on InP based In0.53+xGa0.47-xAs/In0.52Al0.48As HEMT monolithic integrated amplifiers are reported demonstrating the feasibility of this technology. Strained heteroepitaxy (x¿0.0) proved to enhance the device performance and upper frequency limits and was used for the MMIC-realization. More than 15 dB of gain were obtained from 6 to 9.5 GHz. The maximum gain was 22 dB and the return loss better than - 10 dB. In spite of the strained heteroepitaxy which can raise material control questions for MMIC realizations the experimental results for the samples (x=0.07 and x=0.22) showed good agreement with design objectives.