Performance analysis of short channel GaAs MESFET fabricated by SAINT method

In nanoelectronics the speed of the device is the main concern along with their size. The device integrated in nanospace, needs to work faster. The traditional silicon field effect transistors have low sensitivity and low mobility which limit device speed compare to compound semiconductors devices. On the other hand compound metal field effect transistor (MESFET) shows very high cutoff frequency, around 15GHz, for 1 μm channel whereas NMOS shows only 2GHz. The high mobility of GaAs plays the pivotal roles for this enhanced speed of MESFET. Speed of the device also increases for shorter channel length. However fabrication of short channel MESFET needs very complicated lithography process. Self aligned implantation for N⁺ layer technology (SAINT) is a promising method for fabricating short channel MESFET. To achieve short channel MESFET SAINT method has been opted in this work. In this paper we simulated SAINT short channel MESFET using TCAD tool then evaluate the characteristics of voltage and current for different channel length.