Title :
Limits to the efficiency of quantum lithography
Author :
Björk, G. ; Kothe, C. ; Bourennane, M. ; Inoue, S.
Author_Institution :
Sch. of Inf. & Commun. Technol., R. Inst. of Technol. (KTH), Kista, Sweden
Abstract :
While it is certainly possible to generate sub wavelength patterns with arbitrary resolution, the exposure efficiency will scale in a very unfortunate manner. The photons in fields with the required N photon entanglement diffract independently, and hence spread out over the exposed area, making the event that all N photons hit the same detector element very rare. If the lithographic film consist of 5 independent detecting elements, then the exposure time τ scale as τ = S~N. For a 500 x 500 pixel image, this means that the exposure time will increase with a factor 250 000 when going from N to N+l photons.
Keywords :
lithography; quantum optics; arbitrary resolution; detector element; lithographic film; photon entanglement; quantum lithography; wavelength patterns;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5943416