DocumentCode
2078408
Title
High-photon-detection-efficiency silicon avalanche photodiode with charge-sensitive amplifier
Author
Tsujino, Kenji ; Tomita, Akihisa
Author_Institution
NEC Tsukuba Labs., Japan Sci. & Technol. Agency, Tsukuba, Japan
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
1
Abstract
In this work, we developed a high-photon detection efficiency photon counter based on a Si APD with a low-noise charge-sensitive amplifier. For an APD-based photon counter, photon detection efficiency can be improved by increasing two parameters: quantum efficiency and photoelectron detection probability. Firstly, the quantum efficiency is defined in terms of the number of primary electron-hole (e-h) pairs per incident photon.
Keywords
avalanche photodiodes; elemental semiconductors; photon counting; silicon; Si; charge-sensitive amplifier; high-photon-detection-efficiency; low noise; photoelectron detection probability; photon counter; quantum efficiency; silicon avalanche photodiode;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location
Munich
ISSN
Pending
Print_ISBN
978-1-4577-0533-5
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/CLEOE.2011.5943439
Filename
5943439
Link To Document