Title :
Two-Dimensional Modeling and Small-Signal Analysis of GaAs MESFETs
Author :
Cáceres, J.L. ; López, E. ; Pérez, J.
Author_Institution :
SSR Department. E.T.S.I.T. Polytechnical University of Madrid., Ciudad Universitaria s/n. 28040 Madrid.
Abstract :
A simple 2-D physical model for the GaAs MESFET and an efficient numerical scheme for its small-signal analysis are described. Results obtained with our simulator and comparisons with real devices show that the model is realistic and suitable for device CAD and optimization.
Keywords :
Electron traps; Gallium arsenide; Geometry; MESFETs; Poisson equations; Predictive models; Semiconductor process modeling; Solid modeling; Substrates; Temperature;
Conference_Titel :
Microwave Conference, 1990. 20th European
Conference_Location :
Budapest, Hungary
DOI :
10.1109/EUMA.1990.336238
