Title :
Physical Lumped Modelling of Thin-Film MIM Capacitors
Author :
Do Ky, H. ; Meszaros, S. ; Cuhaci, M. ; Syrett, B.A.
Author_Institution :
Communications Research Centre, P. O. Box 11490, Station H, Ottawa, Ontario, K2H 8S2, Canada
Abstract :
To demonstrate the accuracy and versatility of the physical lumped modelling technique, metal-insulator-metal (MIM) capacitors on 254 ¿m substrates are studied and characterized. The results will show that the proposed model is capable of representing MIM capacitors, having values from 0.47 to 20 pF, in the frequency range of 0.5 to 26.5 GHz. An important benefit of this method is that all parameters in the model are computed from the geometry of the capacitors using closed-form expressions; therefore, the model is easily adapted to existing microwave CAD packages for faster and more precise simulation and layout.
Keywords :
Closed-form solution; Computational geometry; Frequency; MIM capacitors; Metal-insulator structures; Microwave theory and techniques; Packaging; Solid modeling; Substrates; Transistors;
Conference_Titel :
Microwave Conference, 1990. 20th European
Conference_Location :
Budapest, Hungary
DOI :
10.1109/EUMA.1990.336241
