DocumentCode
2079684
Title
Temperature and carrier induced spin coherence in GaAs
Author
Bratschitsch, R. ; Chen, Z. ; Cundiff, S.T.
Author_Institution
Colorado Univ., Boulder, CO
fYear
2004
fDate
21-21 May 2004
Firstpage
71
Lastpage
72
Abstract
We observe a surprising increase of the transverse electron spin lifetime with increased lattice temperature up to 100 K in undoped bulk GaAs. The electron g-factor deviates from a linear temperature dependence below 50 K
Keywords
Faraday effect; III-V semiconductors; carrier density; carrier lifetime; electron spin polarisation; g-factor; gallium arsenide; optical rotation; 100 K; Faraday rotation; GaAs; Voigt geometry; carrier density; carrier induced spin coherence; electron g-factor; lattice temperature; linear temperature dependence; temperature induced spin coherence; time-resolved experiments; transverse electron spin lifetime; undoped bulk GaAs;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-778-4
Type
conf
Filename
1366648
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