• DocumentCode
    2079801
  • Title

    Advanced process development using numerical simulation

  • Author

    Duffy, R. ; Concannon, A. ; Mathewson, A.

  • Author_Institution
    Nat. Microelectron. Res. Centre, Cork, Ireland
  • fYear
    1995
  • fDate
    34744
  • Abstract
    In 1993 the flash EEPROM share of the memory market increased by 73%, establishing it as the fastest growing segment of the non-volatile memory market. The aim of this work is to develop and integrate a flash EEPROM memory module into an existing CMOS process without compromising its performance. A design methodology is presented which demonstrates the use of numerical simulation in the evaluation of different process options, before committing the design to silicon
  • Keywords
    CMOS memory circuits; EPROM; integrated circuit design; semiconductor process modelling; CMOS process; Si; design methodology; flash EEPROM memory module; nonvolatile memory; numerical simulation; silicon;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Advanced MOS and Bi-Polar Devices, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19950190
  • Filename
    473085
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2079801