DocumentCode :
2079801
Title :
Advanced process development using numerical simulation
Author :
Duffy, R. ; Concannon, A. ; Mathewson, A.
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
fYear :
1995
fDate :
34744
Abstract :
In 1993 the flash EEPROM share of the memory market increased by 73%, establishing it as the fastest growing segment of the non-volatile memory market. The aim of this work is to develop and integrate a flash EEPROM memory module into an existing CMOS process without compromising its performance. A design methodology is presented which demonstrates the use of numerical simulation in the evaluation of different process options, before committing the design to silicon
Keywords :
CMOS memory circuits; EPROM; integrated circuit design; semiconductor process modelling; CMOS process; Si; design methodology; flash EEPROM memory module; nonvolatile memory; numerical simulation; silicon;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Advanced MOS and Bi-Polar Devices, IEE Colloquium on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19950190
Filename :
473085
Link To Document :
بازگشت