DocumentCode :
2080163
Title :
Emerging non-volatile memories: Opportunities and challenges
Author :
Xue, Chun Jason ; Sun, Guangyu ; Zhang, Youtao ; Yang, J.Joshua ; Chen, Yiran ; Li, Hai
Author_Institution :
City Univ. of Hong Kong, Hong Kong, China
fYear :
2011
fDate :
9-14 Oct. 2011
Firstpage :
325
Lastpage :
334
Abstract :
In recent years, non-volatile memory (NVM) technologies have emerged as candidates for future universal memory. N-VMs generally have advantages such as low leakage power, high density, and fast read spead. At the same time, NVM-s also have disadvantages. For example, NVMs often have asymetric read and write speed and energy cost, which poses new challenges when applying NVMs. This paper contains a collection of four contributions, presenting basic introduction on three emerging NVM technologies, their unique characteristics, potential challenges, and new opportunities that they may bring forward in memory systems.
Keywords :
phase change memories; asymmetric read speed; asymmetric write speed; energy cost; fast read speed; future universal memory; high density; low leakage power; memory systems; nonvolatile memory technologies; phase-change memory; Computer architecture; Magnetic tunneling; Microprocessors; Nonvolatile memory; Phase change materials; Random access memory; Resistance; Non-volatile memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Hardware/Software Codesign and System Synthesis (CODES+ISSS), 2011 Proceedings of the 9th International Conference on
Conference_Location :
Taipei
Print_ISBN :
978-1-4503-0715-4
Type :
conf
Filename :
6062305
Link To Document :
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