• DocumentCode
    2080163
  • Title

    Emerging non-volatile memories: Opportunities and challenges

  • Author

    Xue, Chun Jason ; Sun, Guangyu ; Zhang, Youtao ; Yang, J.Joshua ; Chen, Yiran ; Li, Hai

  • Author_Institution
    City Univ. of Hong Kong, Hong Kong, China
  • fYear
    2011
  • fDate
    9-14 Oct. 2011
  • Firstpage
    325
  • Lastpage
    334
  • Abstract
    In recent years, non-volatile memory (NVM) technologies have emerged as candidates for future universal memory. N-VMs generally have advantages such as low leakage power, high density, and fast read spead. At the same time, NVM-s also have disadvantages. For example, NVMs often have asymetric read and write speed and energy cost, which poses new challenges when applying NVMs. This paper contains a collection of four contributions, presenting basic introduction on three emerging NVM technologies, their unique characteristics, potential challenges, and new opportunities that they may bring forward in memory systems.
  • Keywords
    phase change memories; asymmetric read speed; asymmetric write speed; energy cost; fast read speed; future universal memory; high density; low leakage power; memory systems; nonvolatile memory technologies; phase-change memory; Computer architecture; Magnetic tunneling; Microprocessors; Nonvolatile memory; Phase change materials; Random access memory; Resistance; Non-volatile memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Hardware/Software Codesign and System Synthesis (CODES+ISSS), 2011 Proceedings of the 9th International Conference on
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4503-0715-4
  • Type

    conf

  • Filename
    6062305