DocumentCode
2080163
Title
Emerging non-volatile memories: Opportunities and challenges
Author
Xue, Chun Jason ; Sun, Guangyu ; Zhang, Youtao ; Yang, J.Joshua ; Chen, Yiran ; Li, Hai
Author_Institution
City Univ. of Hong Kong, Hong Kong, China
fYear
2011
fDate
9-14 Oct. 2011
Firstpage
325
Lastpage
334
Abstract
In recent years, non-volatile memory (NVM) technologies have emerged as candidates for future universal memory. N-VMs generally have advantages such as low leakage power, high density, and fast read spead. At the same time, NVM-s also have disadvantages. For example, NVMs often have asymetric read and write speed and energy cost, which poses new challenges when applying NVMs. This paper contains a collection of four contributions, presenting basic introduction on three emerging NVM technologies, their unique characteristics, potential challenges, and new opportunities that they may bring forward in memory systems.
Keywords
phase change memories; asymmetric read speed; asymmetric write speed; energy cost; fast read speed; future universal memory; high density; low leakage power; memory systems; nonvolatile memory technologies; phase-change memory; Computer architecture; Magnetic tunneling; Microprocessors; Nonvolatile memory; Phase change materials; Random access memory; Resistance; Non-volatile memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Hardware/Software Codesign and System Synthesis (CODES+ISSS), 2011 Proceedings of the 9th International Conference on
Conference_Location
Taipei
Print_ISBN
978-1-4503-0715-4
Type
conf
Filename
6062305
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