Title :
Reverse heterojunction engineering: a novel technique for the suppression of the parasitic bipolar transistor in deep sub-micron MOSFETs
Author :
Wu, Z.Y. ; McDaid, L.J. ; Hall, S.
Abstract :
The principle of the use of the “reverse heterojunction” is presented and incorporated into the design of a very short channel vertical MOSFET structure whereby parasitic bipolar action is suppressed by the use of a narrow bandgap, SiGe source
Conference_Titel :
Advanced MOS and Bi-Polar Devices, IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19950188
