DocumentCode
2080356
Title
Reverse heterojunction engineering: a novel technique for the suppression of the parasitic bipolar transistor in deep sub-micron MOSFETs
Author
Wu, Z.Y. ; McDaid, L.J. ; Hall, S.
fYear
1995
fDate
34744
Firstpage
42705
Lastpage
42710
Abstract
The principle of the use of the “reverse heterojunction” is presented and incorporated into the design of a very short channel vertical MOSFET structure whereby parasitic bipolar action is suppressed by the use of a narrow bandgap, SiGe source
fLanguage
English
Publisher
iet
Conference_Titel
Advanced MOS and Bi-Polar Devices, IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19950188
Filename
473087
Link To Document