DocumentCode
2080395
Title
Enhancement of two-phonon combination state amplitudes in laser irradiatied ZnTe
Author
Forst, M. ; Kurz, H. ; Ingale, A.
Author_Institution
Inst. fur Halbleitertechnik, Aachen Univ.
fYear
2004
fDate
21-21 May 2004
Firstpage
132
Lastpage
133
Abstract
Impulsively excited two-phonon combination states are investigated in ZnTe. Upon laser irradiation, a strong amplitude increase is observed that can be explained by the disorder-induced relaxation of wave vector selection rules for Raman scattering
Keywords
II-VI semiconductors; Raman spectra; electro-optical effects; excited states; laser beam effects; phonon-phonon interactions; wide band gap semiconductors; zinc compounds; Raman scattering; ZnTe; disorder-induced relaxation; electrooptic compound semiconductor; impulsively excited states; laser irradiation; two-phonon combination state amplitudes; two-phonon combination states; wave vector selection rules; Absorption; Frequency; Laser excitation; Laser modes; Phonons; Photonic band gap; Pump lasers; Raman scattering; Ultrafast optics; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-778-4
Type
conf
Filename
1366678
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