DocumentCode :
2080596
Title :
(INVITED) Deep-submicron digital CMOS potentialities for millimeter-wave applications
Author :
Cathelin, Andreia ; Martineau, Baudouin ; Seller, Nicolas ; Gianesello, Frederic ; Raynaud, Christine ; Belot, Didier
Author_Institution :
STMicroelectronics, FTM, Crolles
fYear :
2008
fDate :
June 17 2008-April 17 2008
Firstpage :
53
Lastpage :
56
Abstract :
This paper presents the potentialities of deep submicron CMOS technologies for millimeter-wave applications. The target applications are firstly overviewed. Then, the nanometer bulk and SOI CMOS technology offer is presented, presenting integration solutions that take benefit of the intrinsic performances of the active device while minimizing the loss effects introduced by the BEOL. Finally, perspectives regarding future challenges in terms of system integration are discussed.
Keywords :
CMOS digital integrated circuits; millimetre wave integrated circuits; silicon-on-insulator; BEOL; SOI technology; deep-submicron digital CMOS potentialities; loss effects; millimeter-wave applications; nanometer bulk technology; Automotive engineering; BiCMOS integrated circuits; CMOS technology; Frequency; Germanium silicon alloys; Land vehicles; Millimeter wave radar; Millimeter wave technology; Road vehicles; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
ISSN :
1529-2517
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2008.4561384
Filename :
4561384
Link To Document :
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