(INVITED) Deep-submicron digital CMOS potentialities for millimeter-wave applications

Author

Cathelin, Andreia ; Martineau, Baudouin ; Seller, Nicolas ; Gianesello, Frederic ; Raynaud, Christine ; Belot, Didier

Author_Institution

STMicroelectronics, FTM, Crolles

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

53

Lastpage

56

Abstract

This paper presents the potentialities of deep submicron CMOS technologies for millimeter-wave applications. The target applications are firstly overviewed. Then, the nanometer bulk and SOI CMOS technology offer is presented, presenting integration solutions that take benefit of the intrinsic performances of the active device while minimizing the loss effects introduced by the BEOL. Finally, perspectives regarding future challenges in terms of system integration are discussed.

Keywords

CMOS digital integrated circuits; millimetre wave integrated circuits; silicon-on-insulator; BEOL; SOI technology; deep-submicron digital CMOS potentialities; loss effects; millimeter-wave applications; nanometer bulk technology; Automotive engineering; BiCMOS integrated circuits; CMOS technology; Frequency; Germanium silicon alloys; Land vehicles; Millimeter wave radar; Millimeter wave technology; Road vehicles; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561384

Filename

4561384