Title :
A 60-GHz fully-integrated Doherty power amplifier based on 0.13-μm CMOS process
Author :
Wicks, Byron ; Skafidas, Efstratios ; Evans, Rob
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Melbourne, Melbourne, VIC
fDate :
June 17 2008-April 17 2008
Abstract :
A sixty-gigahertz (60-GHz) Doherty power amplifier (PA) has been designed and implemented on 0.13 mum RF-CMOS for use in an integrated 60-GHz transceiver. The fully-integrated design implements the main and auxiliary amplifiers, matching networks, and input and output transmission line networks on-chip. The prototype operating from a 1.6-V supply exhibits an output referred P1dB of 7.0 dB, a PSAT of +7.8 dBm, with peak power gain of 13.5 dB, a 3-dB bandwidth of 6.7 GHz, and 3.0 % PAE. The die area is 1.8 mm2. This amplifier achieves the highest reported figure of merit for power amplifiers of any published millimeter-wave PA on CMOS.
Keywords :
CMOS analogue integrated circuits; field effect MIMIC; millimetre wave power amplifiers; transceivers; Doherty power amplifier; RF-CMOS; bandwidth 6.7 GHz; frequency 60 GHz; gain 13.5 dB; matching networks; on-chip transmission line networks; size 0.13 micron; voltage 1.6 V; Bandwidth; CMOS process; Gain; High power amplifiers; Impedance matching; Network-on-a-chip; Power amplifiers; Power transmission lines; Prototypes; Transceivers; CMOS millimeter wave integrated circuits; Doherty amplifier; millimeter wave amplifiers; power amplifiers;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561388
