Interband transitions in InP biased with THz fields of 4 MV/cm

Author

Schmidt, C. ; Schubert, O. ; Junginger, F. ; Mährlein, S. ; Mayer, B. ; Sell, A. ; Huber, R. ; Leitenstorfer, A.

Author_Institution

Dept. of Phys. & Center for Appl. Photonics, Univ. of Konstanz, Konstanz, Germany

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

Here we develop a THz bias NIR probe setup based on our high-field THz laser system. This scheme allows us to monitor the ultrafast interband dynamics of bulk semiconductors in electric fields as high as 8 MV/cm. We simultaneously detect the inherently phase-locked THz field and the field-induced NIR absorption change in the sample with two optically synchronized NIR pulses as short as 7 fs. Thus, the relative timing jitter between the THz transient and the probe pulse is known on the attosecond timescale.

Keywords

III-V semiconductors; high-speed optical techniques; indium compounds; semiconductor lasers; timing jitter; InP; THz bias NIR probe setup; THz fields; THz transient; attosecond timescale; bulk semiconductors; electric fields; field-induced NIR absorption change; high-field THz laser system; inherently phase-locked THz field; interband transitions; optically synchronized NIR pulses; probe pulse; timing jitter; ultrafast interband dynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5943525

Filename

5943525