Title :
Linearization of differential CMOS low noise amplifier using cross-coupled post distortion canceller
Author :
Kim, Tae-Sung ; Kim, Byung-Sung
Author_Institution :
Sch. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon
fDate :
June 17 2008-April 17 2008
Abstract :
A post-linearization technique for the differential CMOS LNA is presented. The proposed method uses an additional cross-coupled FET pair which generates the 3rd-order inter-modulation (IM3) current to cancel out the IM3 current of the differential amplifier while minimizing the degradation of noise figure and avoiding the gain reduction. This technique is applied to enhance the linearity of the differential CMOS LNA using 0.18-mum technology. The LNA achieved +10.2-dBm IIP3 with 13.7-dB gain and 1.68-dB NF at 2 GHz consuming 11.8-mA from a 1.8-V supply.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; differential amplifiers; field effect transistors; linearisation techniques; low noise amplifiers; IM3 current cancellation; LNA; cross-coupled FET; cross-coupled post distortion canceller; differential CMOS low noise amplifier; differential amplifier; frequency 2 GHz; gain 1.68 dB; gain 13.7 dB; intermodulation current; voltage 1.8 V; CMOS technology; Degradation; Differential amplifiers; FETs; Linearity; Low-noise amplifiers; Noise cancellation; Noise figure; Semiconductor device noise; Voltage; Complementary metal oxide semiconductor (CMOS); intermodulation distortion (IMD); linearization; low noise amplifier (LNA);
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561391