Linearization of differential CMOS low noise amplifier using cross-coupled post distortion canceller

Author

Kim, Tae-Sung ; Kim, Byung-Sung

Author_Institution

Sch. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

83

Lastpage

86

Abstract

A post-linearization technique for the differential CMOS LNA is presented. The proposed method uses an additional cross-coupled FET pair which generates the 3^rd-order inter-modulation (IM3) current to cancel out the IM3 current of the differential amplifier while minimizing the degradation of noise figure and avoiding the gain reduction. This technique is applied to enhance the linearity of the differential CMOS LNA using 0.18-mum technology. The LNA achieved +10.2-dBm IIP3 with 13.7-dB gain and 1.68-dB NF at 2 GHz consuming 11.8-mA from a 1.8-V supply.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; differential amplifiers; field effect transistors; linearisation techniques; low noise amplifiers; IM3 current cancellation; LNA; cross-coupled FET; cross-coupled post distortion canceller; differential CMOS low noise amplifier; differential amplifier; frequency 2 GHz; gain 1.68 dB; gain 13.7 dB; intermodulation current; voltage 1.8 V; CMOS technology; Degradation; Differential amplifiers; FETs; Linearity; Low-noise amplifiers; Noise cancellation; Noise figure; Semiconductor device noise; Voltage; Complementary metal oxide semiconductor (CMOS); intermodulation distortion (IMD); linearization; low noise amplifier (LNA);

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561391

Filename

4561391