Title :
The process variability of a V-band LC-VCO in 65nm SOI CMOS
Author :
Kim, Daeik D. ; Jonghae Kim ; Cho, Choongyeun
Author_Institution :
IBM Semicond. R&D Center, Hopewell, VA
fDate :
June 17 2008-April 17 2008
Abstract :
The process variability of a V-band LC-VCO implemented in 65 nm SOI CMOS is examined. A complementary LC-VCO design, test set up, and measurements are presented. One lot of 300 mm wafers are measured for statistics. There are 8 wafers in the lot, and 67 VCOs per wafer. The VCO frequency tuning range statistics, analog variability against digital benchmark, yield estimation, and intra- vs. inter-wafer variations are analyzed and discussed. The VCO average frequency tuning is 63.7-69.6 GHz, and it shows 90% yield from 65.1 to 67.9 GHz.
Keywords :
CMOS integrated circuits; field effect MIMIC; millimetre wave oscillators; statistical analysis; voltage-controlled oscillators; SOI CMOS; V-band LC-VCO; digital benchmark; frequency 63.7 GHz to 69.6 GHz; frequency tuning range statistics; process variability; size 65 nm; yield estimation; Benchmark testing; CMOS process; CMOS technology; Circuits; Millimeter wave technology; Parasitic capacitance; Radio frequency; Statistics; Tuning; Voltage-controlled oscillators; 65nm SOI CMOS technology; Complementary V-band LC-VCO; chip-limited yield; frequency tuning range; inter- and intra-wafer variation; process-induced variation;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561401
