Title :
Efficient three-state WCDMA PA integrated with high-performance BiHEMT HBT / E-D pHEMT process
Author :
Apel, Thomas ; Henderson, Tim ; Tang, Yu-Lung ; Berger, Otto
Author_Institution :
Triquint Semicond., Hillsboro, OR
fDate :
June 17 2008-April 17 2008
Abstract :
Power amplifiers for WCDMA applications must provide competitive power efficiency at low power levels as well as at full power. This paper presents a novel approach to obtain high PAE performance over a wide power band from three power states. It uses a novel BiHEMT process to co-integrate InGaP/GaAs HBT technology with InGaAs/AlGaAs E/D-Mode pHEMT into a single process. No bias reference voltage is required. Typical ultra-low power mode quiescent current is 5 mA.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; bipolar integrated circuits; broadband networks; code division multiple access; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; low-power electronics; power amplifiers; E-D pHEMT process; HBT technology; InGaAs-AlGaAs; InGaP-GaAs; MMIC power amplifier; current 5 mA; heterojunction bipolar transistor; high-performance BiHEMT process; pseudomorphic high electron mobility transistor; three-state WCDMA PA; ultra-low power mode quiescent current; Circuits; Epitaxial growth; FETs; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Multiaccess communication; PHEMTs; Power amplifiers; Radio frequency; Doherty; HBT; Heterojunction bipolar transistors; MMIC power amplifiers; Power amplifiers; Pseudomorphic high electron mobility transistors Linear integrated circuits;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561406
