• DocumentCode
    2081047
  • Title

    Theoretical and Experimental Investigation of Millimeter-Wave InP Gunn-Effect Oscillator

  • Author

    Ekzhanov, A.E. ; Kosov, A.S. ; Zotov, V.A.

  • Author_Institution
    Space Research Institute, 117810 Profsoyuznaya 84/32, Moscow, USSR.
  • Volume
    2
  • fYear
    1990
  • fDate
    9-13 Sept. 1990
  • Firstpage
    1782
  • Lastpage
    1786
  • Abstract
    A large-signal computer simulation of an InP millimeter-wave Gunn-effect oscillator has been developed. The results of simulation show that increasing active region doping level leads to substantial growth of efficiency. The maximal simulated efficiency for uniformly doped structure was found to be 7.5% at 110 GHz, 4.4% at 160 GHz, 2.1% at 200 GHz. The technology was also developed witch allow to make active structures with small (about 10 ¿m) diameter. The experimental oscillators efficiency was 2% at 110 GHz (fundamental mode) and 0.7% at 150 GHz (second harmonic) for 1.1 ¿m uniformly doped structure.
  • Keywords
    Anodes; Capacitance; Circuits; Computational modeling; Computer simulation; Doping; Electrons; Indium phosphide; Monte Carlo methods; Oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1990. 20th European
  • Conference_Location
    Budapest, Hungary
  • Type

    conf

  • DOI
    10.1109/EUMA.1990.336330
  • Filename
    4136267
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2081047