Title :
A CMOS wideband amplifier with 800 MHz gain-bandwidth
Author :
Eynde, F. Op´t ; Sansen, W.
Author_Institution :
Mietec Alcatel, Brussels, Belgium
Abstract :
A fully differential unity-gain stable CMOS wideband operational amplifier, realized in a standard 1.2-μm CMOS process, is presented. The amplifier uses a capacitive feedforward technique to avoid p-channel transistors in the signal path. With a well-considered transistor sizing, the parasitic poles of the amplifier are shifted to the highest possible frequencies that can be reached with this 1.2-μm technology. In this way, a gain-bandwidth product of 800 MHz and a phase margin of 53° can be obtained
Keywords :
CMOS integrated circuits; linear integrated circuits; operational amplifiers; wideband amplifiers; 1.2 micron; CMOS process; capacitive feedforward technique; gain-bandwidth product; op amp; opamp; operational amplifier; wideband amplifier; Broadband amplifiers; CMOS process; CMOS technology; Circuits; Cutoff frequency; Energy consumption; MOSFETs; Operational amplifiers; Parasitic capacitance; Transconductance;
Conference_Titel :
Custom Integrated Circuits Conference, 1991., Proceedings of the IEEE 1991
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0015-7
DOI :
10.1109/CICC.1991.164075
